Semiconductor device having hetero grain stack gate and method of forming the same

ABSTRACT

A semiconductor device includes a hetero grain stack gate (HGSG). The device includes a semiconductor substrate having a surface, a gate insulating layer formed over the surface of the semiconductor substrate, and a gate electrode formed over the gate insulating layer, wherein the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, and an upper poly-Si layer having a random crystalline structure. In one embodiment, the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, an intermediate layer having an random crystalline structure, and an upper poly-Si layer having a columnar crystalline structure. A method of manufacturing a semiconductor device having an HGSG comprises depositing a gate insulating layer over a surface of a semiconductor substrate, depositing a lower poly-SiGe layer having a columnar crystalline structure over the gate insulating layer, depositing an amorphous Si layer over the lower poly-SiGe layer, and crystallizing the amorphous Si layer to obtain an upper poly-Si layer having a random crystalline structure.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention generally relates to a semiconductor devicestructure and to a method of manufacturing the same, and moreparticularly, the present invention relates to a transistor having ahetero grain stack gate structure, and to a method of manufacturing thesame.

[0003] 2. Description of Related Art

[0004] Semiconductor devices such as field effect transistors (FETs) arebecoming increasingly important in low voltage applications. Assemiconductor devices are fabricated to have a higher degree ofintegration, a faster operating speed, and a lower power consumption,the magnitude or size of a complementary metal-on-semiconductor fieldeffect transistor (CMOSFET) included in the device is rapidly reduced.As FET devices are scaled to smaller and smaller dimensions,manufacturers must refine transistor designs to maintain optimum deviceperformance.

[0005] To control problems associated with a short-channel-effect (SCE)in a deep-submicron MOS transistor, a dual gate type CMOSFET design iswidely used. The dual gate type CMOSFET has a surface channel in each ofthe NMOS and PMOS transistors, and a symmetric low threshold voltage(V_(th)). For example, with a currently-available conventional dual gatedevice, when the threshold voltage of the NMOS device is 0.5V, then thethreshold voltage of the PMOS device is −0.5V. The dual gate typeCMOSFET uses N+ and P+ polycrystalline (polysilicon) gate electrodes inthe NMOS and PMOS transistors, respectively.

[0006] A conventional CMOSFET structure, and relevant steps of a methodof manufacturing such a device, will be described with reference toFIGS. 1A-C as follows.

[0007] Referring to FIGS. 1A and B, a standard twin retrograded-wellprocess is used to form an N-well 2 n and a P-well 2 p in the substrate2 via a conventional photoresist masking and ion implantation process.In the N-well 2 n and P-well 2 p are formed lightly doped drain regions16 a and 74 a, including halo doping profiles 16 b and 74 brespectively. On each of the N-well 2 n and P-well 2 p is formed a gateoxide layer 6 p and a stacked gate electrode on top of the gate oxidelayer 6 p, including a thin polysilicon layer 8 p and stackedpolysilicon structure 73. Laterally adjacent to the gate electrode is aliquid phase deposition (LPD) oxide layer 18 and stacked polysiliconlayers 72. Such a structure is then subjected to a heavy ionimplantation using, for example, BF₂ ⁺.

[0008] As shown in FIG. 1B, after doping for both the PMOS and NMOStransistors is complete, a thermal treatment is performed to condensethen LPD oxide 18 and to activate the S/D implants. The thermaltreatment diffuses the heavy implants in the polysilicon stack layers 72into the substrate 2 to form the buried contacts and ultra-shallowjunctions. Then a refractory metal layer 28, such as Ti, Co, W etc., issputtered on the polysilicon stack layers 72 and the LPD oxide 18.

[0009] Turning to FIG. 1C, next a standard two-step silicidation processis performed, consisting of a rapid thermal annealing (RTA) to react themetal layer 28 with the polysilicon stack layer 72 to form a thinsilicide layer 28 a on the polysilicon stack layers 72. Then theunreacted metal is removed from the oxide using a standard wet etchingprocess. A second RTA process is performed to transform the silicide'sphase to a less resistive phase.

[0010] However, there are some problems with this conventional CMOSFETdevice.

[0011] In the PMOS transistor, when the thickness of the gate oxidelayer 6 p is less than 50 Å, boron implanted into the polysilicon gateelectrode diffuses into the gate oxide layer 6 p (Boron penetration).When this happens, the boron diffuses into the semiconductor substrate 2and decreases the carrier mobility which causes a threshold voltagefluctuation. Due to the threshold voltage fluctuation, the thresholdvoltage V_(th) of the gate cannot be controlled, thereby degrading thecharacteristics of the PMOS transistor.

[0012] Also, even though the polysilicon gate electrode isover-implanted by ions, it is not a complete conductor. Therefore,during the operation of the MOS transistor, a depletion region may arisedue to a depletion of the electric charges at an interface between thegate oxide layer and substrate. The depletion region of the polysilicongate has a magnitude of several angstroms (Å) and acts as a connectedgate oxide layer capacitor. If the thickness of gate oxide layer issmall, the characteristics of the transistor are poor due to thepolysilicon-gate-depletion region.

[0013] To address the boron penetration and thepolysilicon-gate-depletion effect (PDE) problems, a method of replacinga conventional polycrystalline silicon (poly-Si) gate with apolycrystalline silicon germanium (poly-SiGe) gate has been proposed(see, e.g., IEDM Tech. Dig. 1990 pp. 253-256). The poly-SiGe gatestructure can be manufactured by the conventional CMOS process and cancontrol the boron penetration and the PDE problems discussed above.

[0014] Also, the work function of poly-SiGe is different from that ofpoly-Si, thereby increasing the threshold voltage of the device.Therefore, the amount of channel doping can be decreased, increasing thecarrier mobility.

[0015] However, when the metal silicide layer of Ti or Co is formed onthe gate structure (as described above with respect to FIGS. 1A-C), itis difficult to form it on the poly-SiGe layer compared with forming iton the poly-Si layer. Also, due to the penetration of Ge into thesilicide layer, the resistivity of the poly-Si layer is rapidlyincreased, which is undesirable.

[0016] Therefore, in the CMOS device with the conventional poly-SiGegate, a single poly-SiGe layer is not used, but instead a stacked gatestructure having a lower polySiGe layer and an upper poly-Si layer isused. The upper poly-Si layer of the stacked gate structure facilitatesthe silicide process carried out during the CMOS fabrication to therebyincrease the conductivity.

[0017] Generally, the poly-SiGe layer is formed by a CVD method using asource gas of SiH₄ and GeH₄. To improve the PDE and the boronpenetration characteristics of the poly-SiGe PMOS transistor, it isdesirable to form the poly-SiGe layer to have a Ge concentration of atleast 20% (see IEEE Electron Device Letters, 10(7), 1998, p.247, by W.C. Lee et. al.). However, when the Ge concentration is more than 30% andis deposited by a chemical vapor deposition (CVD) method, the surfaceroughness abruptly deteriorates. If the concentration of GeH₄ gas isincreased to thereby increase the Ge concentration in the poly-SiGelayer, the roughness of the surface deteriorates proportionally to theincrease in the GeH₄ concentration. Therefore, it is difficult to carryout a subsequent photolithography process, and pits are generated in thesubstrate during a subsequent etching processes. Accordingly, it isknown in the art that the Ge concentration of the poly-SiGe layer foruse in the gate is preferably in the range of 20-30%.

[0018] After the sequentially stacked poly-SiGe and poly-Si layers areformed as a gate electrode, thermal processes such as gate re-oxidation,silicon nitride deposition, and activation annealing (described abovewith respect to FIGS. 1A-C) are carried out.

[0019] However, at this time Ge diffuses from the lower poly-SiGe layerinto the upper poly-Si layer. Accordingly, the Ge concentration of thepoly-SiGe layer is reduced from the original Ge concentration (see IEEEElectron Device, 47(4), 2000 p.848 by Y. V. Ponomarev). To account forthe Ge diffusion, the Ge concentration in the poly-SiGe layer when it isformed may be set to more than 30%. However, as stated above, thisundesirably increases the surface roughness. On the other hand, if thepoly-SiGe layer is formed with a Ge concentration of 20-30%, the Geconcentration in the resultant PMOS transistor is reduced to less than20% after the final CMOS process, thus having little or no effect incontrolling the PDE or the boron penetration.

[0020] Therefore, there is a shortcoming in the conventionalsemiconductor device wherein the gate electrode has the stackedpoly-SiGe and poly-Si layers.

[0021] Accordingly, it would be desirable to provide an improvedsemiconductor device having a stacked poly-SiGe and the poly-Si layerwith reduced Ge diffusion. It would further be desirable to provide amethod of manufacturing a semiconductor device having a stackedpoly-SiGe and the poly-Si layer with reduced Ge diffusion.

SUMMARY OF THE INVENTION

[0022] The present invention is directed to a semiconductor deviceincluding a gate having a discontinuous hetero grain stack structure,and to a method of forming such a device.

[0023] In one aspect of the invention, a semiconductor device includes asemiconductor substrate having a surface, a gate insulating layer formedover the surface of the semiconductor substrate, and a gate electrodeformed over the gate insulating, wherein the gate electrode includes alower poly-SiGe layer having a columnar crystalline structure, and anupper poly-Si layer having a random crystalline structure.

[0024] In another aspect of the invention, a semiconductor deviceincludes a semiconductor substrate having a surface, a gate insulatinglayer formed over the surface of the semiconductor substrate, and a gateelectrode formed over the gate insulating layer, wherein the gateelectrode includes a lower poly-SiGe layer having a columnar crystallinestructure, an intermediate layer having an random crystalline structure,and an upper poly-Si layer having a columnar crystalline structure.

[0025] In yet another aspect of the invention, a semiconductor device ismanufactured by depositing a gate insulating layer over a surface of asemiconductor substrate, depositing a lower poly-SiGe layer having acolumnar crystalline structure over the gate insulating layer,depositing an amorphous Si layer over the lower poly-SiGe layer, andcrystallizing the amorphous Si layer to obtain an upper poly-Si layerhaving a random crystalline structure.

[0026] In still another aspect of the invention, a semiconductor deviceis manufactured by depositing a gate insulating layer over a surface ofa semiconductor substrate, depositing a lower poly-SiGe layer having acolumnar crystalline structure over the gate insulating layer,depositing at least one intermediate layer having an amorphous structureover the lower poly-SiGe layer, depositing an amorphous Si layer overthe at least one intermediate layer, and crystallizing the amorphous Silayer to obtain an upper poly-Si layer having a random crystallinestructure.

[0027] In a further aspect of the invention, a semiconductor device ismanufactured by depositing a gate insulating layer over a surface of asemiconductor substrate, depositing a lower poly-SiGe layer having acolumnar crystalline structure over the gate insulating layer,depositing an amorphous intermediate layer over the lower poly-SiGelayer, depositing an upper poly-Si layer over the amorphous intermediatelayer, and crystallizing the amorphous intermediate layer to obtain acrystallized intermediate layer having a random crystalline structurebetween the lower poly-SiGe layer and the upper poly-Si layer.

BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The features and advantages of the present invention will becomemore clearly understood from the detailed description that follows, withreference to the accompanying drawings. It is important to point outthat the illustrations of the drawings may not necessarily be drawn toscale, and that there may be other embodiments of this invention thatare not specifically illustrated but which will still fall under thescope of the present invention. In the drawings:

[0029] FIGS. 1A-C shows a conventional transistor structure;

[0030]FIG. 2 shows another conventional transistor structure;

[0031]FIG. 3 shows a semiconductor device having a gate with a heterograin stack structure;

[0032]FIG. 4 illustrates a method of forming the gate having thestructure shown in FIG. 3;

[0033]FIG. 5 illustrates a process of crystallization starting at aninterface region in contact with the lower poly-SiGe layer duringdeposition of amorphous Si;

[0034]FIGS. 6A and 6B illustrate a second method of forming the gatehaving the structure shown in FIG. 3;

[0035]FIG. 7 shows a second embodiment of a semiconductor device with agate having a hetero grain stack structure;

[0036]FIGS. 8A and 8B show Ge concentration distributions for gateshaving the structures shown in FIGS. 2 and 3;

[0037]FIG. 9 illustrates the capacitance equivalent oxide thickness(CET) of gates having the structures in FIGS. 2 and 3; and

[0038]FIGS. 10A and 10B show vertical views of the gates of FIGS. 2 and3, as viewed through TEM (Tunneling Electro-Microscopy).

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

[0039] Hereinafter, the present invention will be described in detailwith reference to the accompanying drawings.

[0040] The diffusion mechanism in a poly-crystalline structure isdifferent from that in a single crystalline structure because of a grainboundary in the poly-crystalline structure. Generally, since the grainboundary is a region in which atoms forming a solid structure arerandomly arranged, the diffusion speed therein is faster than that inthe grain boundary in which atoms forming a solid structure are arrangedin an orderly fashion. Accordingly, in the poly-crystalline structure,the diffusion mostly occurs through the grain boundary.

[0041]FIG. 2 illustrates a conventional gate structure for aconventional semiconductor (CMOSFET) device, wherein the crystallinestructures of a lower poly-SiGe layer 13 and an upper poly-Si layer 14form a continuous columnar structure, such as disclosed in U.S. Pat. No.6,180,499 B1.

[0042] In this case, Ge easily diffuses through the grain boundary fromthe lower poly-SiGe layer 13 to the upper poly-Si layer 14. Thecontinuous columnar structure of the grain boundary has a length alongan X (horizontal) axis parallel to the semiconductor substrate that isshorter than the length along the Y (vertical) axis perpendicular to thesubstrate, and therefore acts as a kind of pipe, accelerating thediffusion of Ge into the upper poly-Si layer.

[0043]FIG. 3 shows one embodiment of a semiconductor (CMOSFET) devicehaving a hetero grain stack gate (HGSG). The gate shown in FIG. 3comprises a lower poly-SiGe layer 23 having a columnar structure inwhich the grain size is smaller than the grain size in an upper poly-Silayer 24. The upper poly-Si layer 24 has a random crystalline structurein which the length of the grain size along the X (horizontal) axis isgreater than or the same as the length along the Y (vertical) axis.Because the grain boundary of the lower poly-SiGe layer 23 is not formedcontinuously with the grain boundary of the upper poly-Si layer 24, thediffusion of Ge is restrained. Alternatively, the gate can be replacedwith a structure having a lower layer of a random crystalline structurein which the grain boundary size is large, and an upper layer of acolumnar structure in which the grain boundary size is small. However,to ensure evenly distributed implanted ions in the lower layer of thegate for forming NMOS and PMOS transistors, it is desirable that thelower poly-SiGe layer has the columnar structure.

[0044]FIG. 4 illustrates a method of forming the gate having thestructure shown in FIG. 3.

[0045] Referring to FIG. 4, a gate insulator 22 of silicon oxide (SiO₂)is formed on an Si substrate 21, and a poly-Si or amorphous Si layer 210of 10-100 Å (preferably 10-50 Å) is formed by a chemical vapordeposition (CVD) method on the gate insulator 22. The Si layer 210functions as a seed layer for the subsequent SiGe layer (see J.Electrochem. Soc. 141(8) 1994 pp.2235-2241). This is a generally knownmethod of forming a poly-SiGe layer on a Si oxide layer. On the Si layer210, a poly-SiGe layer 23 is formed using a source gas of SiH4 and GeH4at a temperature of 450-600° C. by a CVD method. The poly-SiGe layer 23has a columnar structure. On the poly-SiGe layer 23, an amorphous Silayer 211 is formed using a source gas such as SiH₄ or Si₂H₆ at atemperature of 350-580° C. Generally, it is known that the phasetransformation temperature between the polycrystalline and amorphousstructures is about 580° C. The amorphous Si layer 211 is crystallizedto have a random polycrystalline structure by the thermal processes ofre-oxidation and an activation annealing. Consequently, the formed gatestructure is the same as that shown in FIG. 3.

[0046] The lower the temperature at which the amorphous Si layer isformed, the better the results. For example, when the temperature ismore than 500° C., crystallization starts at an interface region incontact with the lower poly-SiGe layer during the amorphous Sideposition process, wherein the amorphous Si layer has a continuouscolumnar structure as shown in FIG. 5. On the other hand, when thetemperature is less than 550° C., the deposition speed of the amorphousSi layer is low, thereby reducing the throughput.

[0047] Accordingly, FIG. 6A and FIG. 6B illustrate another method offorming the gate having the structure shown in FIG. 3.

[0048] The steps of forming the gate insulator 22 of SiO₂, the seed Silayer 210, and the poly-SiGe layer 23 having a columnar structure arethe same as that explained above, and consequently the explanation willnot be repeated here. On the poly-SiGe layer 23, an amorphous Si layer211, used as an interlayer, and an amorphous SiGe layer 214 aresequentially formed. In the embodiment shown in FIG. 6A, the amorphousSiGe layer 214 is formed after forming the amorphous Si layer 211.However, the amorphous SiGe layer 214 can be formed first, as shown inFIG. 6B. Also, only one of the amorphous Si layer 211 or the amorphousSiGe layer 214 may be formed. The amorphous Si layer 211 is beneficiallyformed to a thickness of 50-200 Å at a temperature of less than 500° C.,and the amorphous SiGe layer 214 is formed to a thickness of 50-200 Å ata temperature of less than 450° C.

[0049] On the amorphous Si layer 211 (or the amorphous SiGe layer 214),an amorphous Si layer 213 is formed at a temperature of 500-580° C. Inthis case, since the amorphous Si layer 213 has a relatively highdeposition speed, the throughput is not reduced.

[0050] Then, the gate structure shown in FIG. 3, in which the upper andlower grain boundaries are different from each other, is formed bypatterning, gate re-oxidation, and formation of the gate spacers 15, 25.To complete the device, shallow source/drain regions 17, 27 are formed,deep source/drain regions 16, 26 are formed, and then annealingactivates the source/drain regions.

[0051] One reason that the HGSG of FIG. 3 can be produced by the methodillustrated in FIG. 6A or FIG. 6B is that when the depositiontemperature is lowered, the energy required for crystallization isincreased. Therefore, since the amorphous Si layer 211 is formed at areduced temperature in the methods illustrated in FIG. 6A or FIG. 6B, itdoes not form the crystalline column structure. Also, because thecrystallization of the amorphous Si 211 (or amorphous SiGe 214) beginsat the interface between the poly-SiGe layer 23 and the amorphous Silayer 211 (or amorphous SiGe layer 214), and the crystallization patternof the lower poly-SiGe layer 23 moves upward, the interlayer acts torestrain the crystallization pattern from moving upward.

[0052]FIG. 7 shows a second embodiment of a semiconductor (CMOSFET)device having an HGSG. The gate of FIG. 7 comprises a lower poly-SiGelayer 33 and an intermediate layer 34 a such as a poly-Si or poly-SiGelayer. The lower poly-SiGe layer 33 has a columnar structure in which agrain size is smaller than the grain size in an intermediate layer 34 asuch as a poly-Si or poly-SiGe layer. The intermediate layer 34 a, suchas a poly-Si or poly-SiGe layer, has a random structure in which thegrain size is larger than the grain size in the lower poly-SiGe layer33.

[0053] In a method of forming the gate structure of FIG. 7, a poly-SiGelayer 33 is formed by the same method as explained with reference toFIG. 4. An intermediate layer, 34 a (for example, a poly-Si layer) isobtained by forming, e.g., an amorphous Si layer to a thickness of20-500 Å, and then by crystallizing it to have a random crystallinestructure in a subsequent heat treatment. On the poly-Si layer 34 a, apoly-Si layer 34 b having a columnar structure is deposited at atemperature of more than 580° C. by a CVD method.

[0054]FIG. 8A and FIG. 8B show Ge concentration distributions after aboron ion implantation, a re-oxidation and an activation annealing werecarried out to form PMOS transistors, after forming gates having thestructures shown in FIG. 3 and FIG. 2, respectively.

[0055] More specifically, the gate having the Ge concentration shown inFIG. 8A has the hetero grain stack structure illustrated in FIG. 3. Toform the gate structure, a lower poly-SiGe layer having a Geconcentration of 20% was formed to a thickness of 600-700 Å, and anupper poly-Si layer was then formed to a thickness of 1,300-1,400 Å.After patterning the gate, boron ions were implanted and re-oxidationwas carried out at a temperature of 950° C. for 2 minutes. A rapidthermal process (RTP) was carried out at a nitrogen atmosphere of 1,000°C. for 20 seconds. The Ge concentration distribution was measured usingan auger electron spectroscopy (AES) analysis.

[0056] Meanwhile, the gate having the GE concentration shown in FIG. 8Bis the conventional gate of FIG. 2. In that case, a lower poly-SiGelayer having a Ge concentration of 30% was formed at a thickness of600-700 Å and an upper poly-Si layer was then formed to a thickness of1,300-400 Å. After carrying out the same processes as FIG. 8A, the Geconcentration distribution was measured using the AES analysis.

[0057] In FIGS. 8A-B, the X-axis indicates a sputtering time. Increasedsputtering time (greater X axis values) equate to the lower portions ofthe gate layer. The Y-axis indicates the distribution of the percentageof atom (Ge or Si) concentration present (black dots).

[0058] The Ge concentration curve (black dots) shown in FIG. 8A shows anabrupt change in the Ge concentration profile when the Ge concentrationwas densified on the lower poly-SiGe layer of the gate. In contrast, inthe chart of FIG. 8B the left-hand side of the curve (black dots) showsthe Ge concentration profile having a tail in which the Ge concentrationis slowly reduced from its level at the interface between the upperpoly-Si layer and the lower poly-SiGe layer of the gate. Also, FIG. 8Bshows that the Ge concentration of the original lower poly-SiGe layerwas reduced from 30% to 20% after undergoing the boron ion implantation,reoxidation, and RTP annealing processes. In other words, FIG. 8Billustrates that Ge diffuses from the lower poly-SiGe layer into theupper poly-Si layer.

[0059] As is apparent from the results of the AES analysis shown in FIG.8A and FIG. 8B, it can be appreciated that the gate structure shown inFIG. 3 restrains Ge from diffusing as compared with the conventionalstructure shown in FIG. 2.

[0060]FIG. 9 is a chart illustrating the results that were obtained bymeasuring the capacitance equivalent oxide thickness (CET) of gateshaving the structures in FIG. 2 and FIG. 3. In the diagram open (white)circles and closed (black) circles show the CETs of the gates of FIG. 2and FIG. 3, respectively. The CET is the oxide thickness calculated by acapacitance vs. voltage plot (C-V plot). The C-V plot is obtained bymeasuring the difference in capacitance between the gate and thesubstrate according to a change in voltage supplied to the gate.Generally, the capacitance is in direct proportion to the dielectricconstant of an insulation layer between the gate and the substrate, andin inverse proportion to the thickness thereof. For example, in the gateof a PMOS transistor, when the gate is supplied with a positive voltage,then the substrate becomes in an accumulation state in which electronsare accumulated. Conversely, when the gate is supplied with a negativevoltage then the substrate becomes in an inversion state in which holesare accumulated. The curves shown on the left-hand side of FIG. 9 show,respectively, the CETs of the gates of FIG. 3 and FIG. 2 calculated fromthe C-V plot in the accumulation state. There was no significantdifference between the CET of the gate having the discontinuous heterograin stack structure shown in FIG. 3 and the CET of the gate having thecontinuous columnar stack structure shown in FIG. 2.

[0061] The curves shown on the right-hand side of FIG. 9 show,respectively, the CETs of the gates of FIG. 3 and FIG. 2 calculated fromthe C-V plot in the inversion state. The poly-gate is not depleted inthe accumulation state, but it is depleted in the inversion state.Therefore, the CET in the inversion state has a value higher than thatof the CET in the accumulation state in consideration of the poly-gatedepletion. That is, since the poly-gate depletion region acts as acapacitor connected with the gate insulator during the operation of thesemiconductor device, the CET in the inversion state has a value higherthan that of the CET in the accumulation state. As shown in FIG. 9, theCETs of the gate of FIG. 3 (black circles) were smaller than those ofthe gate of FIG. 2 (open circles). This means that the gate depletion inthe gate of FIG. 3 was smaller than that of the gate of FIG. 2. Thus, itcan be appreciated through the diagram of FIG. 9 that in the HGSG (e.g.,FIG. 3), the Ge diffusion was restrained and the Ge concentration wasmaintained to a high degree compared with the conventional gatestructure.

[0062]FIGS. 10A and 10B are vertical views of the conventional gatestructure and an HGSG, respectively, as viewed through TEM (TransmissionElectro-Microscopy). FIG. 10A shows the gate structure of FIG. 2, andFIG. 10B shows the gate structure of FIG. 3, formed by the methodillustrated in FIG. 6A. The lower poly-SiGe layer is formed using sourcegases of 200 sccm SiH₄, 40 sccm GeH4, and 6 slm H2 at 500-550° C. Theinterlayer amorphous Si is formed using source gases of 200 sccm SiH₄and 6 slm H₂ at 450-500° C. The interlayer amorphous SiGe is formedusing source gases of 200 sccm SiH4, 35 sccm GeH4, 6 slm H2 at 400-450°C. The upper amorphous Si is formed using source gas of 250 sccm SiH₄, 6slm H₂ at 550° C. The interlayer(s) and the upper amorphous Si arechanged into a poly-crystalline structure during the subsequentannealing step.

[0063] In the drawings and specification, there have been disclosedtypical preferred embodiments of this invention and, although specificterms are employed, they are used in a generic and descriptive senseonly and not for purposes of limitation, the scope of the presentinvention being set forth in the following claims.

What is claimed is:
 1. A semiconductor device comprising: asemiconductor substrate having a surface; a gate insulating layer formedover the surface of the semiconductor substrate; and a gate electrodeformed over the gate insulating layer; wherein the gate electrodeincludes a lower poly-SiGe layer having a columnar crystallinestructure, and an upper poly-Si layer having a random crystallinestructure.
 2. The device of claim 1, wherein a grain size of the upperpoly-Si layer is larger than a grain size of the lower poly-SiGe layer.3. The device of claim 1, wherein a grain size of the upper poly-Silayer in a direction horizontal to the surface of the semiconductorsubstrate is at least as great as a grain size of the upper poly-Silayer in a direction vertical to the surface of the semiconductorsubstrate.
 4. The device of claim 1, further comprising a seed layerinterposed between the lower poly-SiGe layer and the gate insulatinglayer.
 5. The device of claim 1, further comprising at least oneintermediate layer interposed between the upper poly-Si layer and thelower poly-SiGe layer.
 6. The device of claim 5, wherein the at leastone intermediate layer includes a Si layer.
 7. The device of claim 5,wherein the at least one intermediate layer includes a SiGe layer. 8.The device of claim 5 wherein the at least one intermediate layerincludes a Si layer and a SiGe layer.
 9. A semiconductor devicecomprising: a semiconductor substrate having a surface; a gateinsulating layer formed over the surface of the semiconductor substrate;and a gate electrode formed over the gate insulating layer; wherein thegate electrode includes a lower poly-SiGe layer having a columnarcrystalline structure, an intermediate layer having an randomcrystalline structure, and an upper poly-Si layer having a columnarcrystalline structure.
 10. The device of claim 9, wherein theintermediate layer is a poly-Si layer.
 11. The device of claim 9,wherein the intermediate layer is a poly-SiGe layer.
 12. The device ofclaim 9, wherein a grain size of the intermediate layer is larger than agrain size of the lower poly-SiGe layer.
 13. A method of manufacturing asemiconductor device, comprising: depositing a gate insulating layerover a surface of a semiconductor substrate; depositing a lowerpoly-SiGe layer having a columnar crystalline structure over the gateinsulating layer; depositing an amorphous Si layer over the lowerpoly-SiGe layer; and crystallizing the amorphous Si layer to obtain anupper poly-Si layer having a random crystalline structure.
 14. Themethod of claim 13, wherein the lower poly-SiGe layer is deposited byCVD at a temperature range of 400° C. to 600° C.
 15. The method of claim13, wherein the lower poly-SiGe layer is deposited by chemical vapordeposition of SiH₄ and GeH₄ at a temperature range of 400° C. to 600° C.16. The method of claim 13, wherein the lower poly-SiGe layer isdeposited by chemical vapor deposition of Si₂H₆ and GeH₄ at atemperature range of 400° C. to 600° C.
 17. The method of claim 13,wherein the amorphous Si layer is deposited by CVD at a temperaturerange of 350° C. to 580° C.
 18. The method of claim 13, furthercomprising, prior to crystallizing the amorphous Si layer, patterningthe lower poly-SiGe layer and the amorphous Si layer to define a gateelectrode.
 19. The method of claim 13, further comprising, aftercrystallizing the amorphous Si layer, patterning the lower poly-SiGelayer and the upper poly-Si layer to define a gate electrode.
 20. Themethod of claim 13, further comprising depositing a seed layer on thesurface of the semiconductor layer prior to depositing the lowerpoly-SiGe layer.
 21. The method of claim 13, wherein the amorphous Silayer is crystallized by an anneal process.
 22. A method ofmanufacturing a semiconductor device, comprising: depositing a gateinsulating layer over a surface of a semiconductor substrate; depositinga lower poly-SiGe layer having a columnar crystalline structure over thegate insulating layer; depositing at least one intermediate layer havingan amorphous structure over the lower poly-SiGe layer; depositing anamorphous Si layer over the at least one intermediate layer; andcrystallizing the amorphous Si layer to obtain an upper poly-Si layerhaving a random crystalline structure.
 23. The method of claim 22,wherein the at least one intermediate layer is another amorphous Silayer.
 24. The method of claim 22, wherein the at least one intermediatelayer is an amorphous SiGe layer.
 25. The method of claim 24, whereinthe amorphous SiGe layer is deposited by CVD at a temperature range of350° C. to 500° C.
 26. The method of claim 24, wherein the amorphousSiGe layer is deposited by CVD of (SiH₄ or Si₂H₆) and GeH₄ at atemperature range of 350° C. to 500° C.
 27. The method of claim 22,wherein the at least one intermediate layer includes a firstintermediate layer and a second intermediate layer, wherein the firstintermediate layer is another amorphous Si layer and the secondintermediate layer is an amorphous SiGe layer.
 28. The method of claim22, wherein the amorphous Si layer is deposited by CVD at a temperaturerange of 350° C. to 580° C.
 29. The method of claim 22, wherein theamorphous Si layer is deposited by CVD of SiH₄ or Si₂H₆ at a temperaturerange of 350° C. to 580° C.
 30. A method of manufacturing asemiconductor device, comprising: depositing a gate insulating layerover a surface of a semiconductor substrate; depositing a lowerpoly-SiGe layer having a columnar crystalline structure over the gateinsulating layer; depositing an amorphous intermediate layer over thelower poly-SiGe layer; depositing an upper poly-Si layer over theamorphous intermediate layer; and crystallizing the amorphousintermediate layer to obtain a crystallized intermediate layer having arandom crystalline structure between the lower poly-SiGe layer and theupper poly-Si layer.